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| STW30NM60D N-CHANNEL 600V - 0.125 - 30A TO-247 Fast Diode MDmeshTM MOSFET Table 1: General Features TYPE STW30NM60D s s s s Figure 1: Package RDS(on) < 0.145 ID 30 A VDSS 600 V s s TYPICAL RDS(on) = 0.125 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE RATED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE FAST INTERNAL RECOVERY DIODE TO-247 DESCRIPTION The FDmeshTM associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Figure 2: Internal Schematic Diagram s APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT Table 2: Order Codes SALES TYPE STW30NM60D MARKING W30NM60D PACKAGE TO-247 PACKAGING TUBE Rev. 3 June 2004 1/9 STW30NM60D Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature Value 600 600 30 30 18.9 120 312 2.5 20 -55 to 150 -55 to 150 Unit V V V A A A W W/C V/ns C C ( ) Pulse width limited by safe operating area (1) ISD 30A, di/dt 400A/s, VDD V(BR)DSS, Tj T JMAX. Table 4: Thermal Data Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.4 62.5 300 C/W C/W C Table 5: Avalanche Characteristics Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 15 740 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 6: On /Off Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125C VGS = 20 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 15 A 3 4 0.125 Min. 600 10 100 10 5 0.145 Typ. Max. Unit V A A A V 2/9 STW30NM60D Table 7: Dynamic Symbol gfs (1) Ciss Coss Crss COSS eq (3). td(on) tr td(off) tf Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 15 V , ID = 15 A VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. 16 2520 800 75 390 32 33 75 35 82 24 42 115 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC VGS = 0 V, VDS = 0 to 480 V VDD = 300 V, ID = 15 A, RG = 4.7 , VGS = 10 V (see Figure 15) VDD = 480 V, ID = 30 A, VGS = 10 V (see Figure 18) Table 8: Source Drain Diode Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 30 A, VGS = 0 ISD = 30 A, di/dt = 100 A/s VDD = 50V (see Figure 16) ISD = 30 A, di/dt = 100 A/s VDD = 50V, Tj = 150C (see Figure 16) 165 1.1 14 312 3.3 21 Test Conditions Min. Typ. Max. 30 120 1.5 Unit A A V ns nC A ns nC A (1) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. (3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/9 STW30NM60D Figure 3: Safe Operating Area Figure 6: Thermal Impedance Figure 4: Output Characteristics Figure 7: Transfer Characteristics Figure 5: Transconductance Figure 8: Static Drain-source On Resistance 4/9 STW30NM60D Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations Figure 10: Normalized Gate Thereshold Voltage vs Temperature Figure 13: Normalized On Resistance vs Temperature Figure 11: Dource-Drain Diode Forward Characteristics 5/9 STW30NM60D Figure 14: Unclamped Inductive Load Test Circuit Figure 17: Unclamped Inductive Wafeform Figure 15: Switching Times Test Circuit For Resistive Load Figure 18: Gate Charge Test Circuit Figure 16: Test Circuit For Inductive Load Switching and Diode Recovery Times 6/9 STW30NM60D TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 7/9 STW30NM60D Table 9: Revision History Date 24-June-2004 Revision 3 New Stylesheet. Rds(on) Max@10V changed. See Table 6. Description of Changes The document change from "ADVANCED" to "COMPLETE". 8/9 STW30NM60D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 9/9 |
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